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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Objective data sheet

Rev. 01 — 3 June 2004

3 of 14

Philips Semiconductors

PBSS4160DPN

5.

Limiting values

[1]

[2]

Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

[3]

Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for

6.

Thermal characteristics

[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for

[2]

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor unless otherwise specified; for the PNP transistor with negative polarity

collector-base voltage

open emitter

-

80

V

collector-emitter voltage

open base

-

60

V

emitter-base voltage

open collector

-

5

V

collector current (DC)

-

1

A

peak collector current

t = 1 ms or

limited by

-2

A

repetitive peak collector

current

NPN

[1]

-2

A

PNP

[1]

-

1.5

A

base current (DC)

-

300

mA

peak base current

δ≤ 0.02

-1

A

total power dissipation

[2]

-

310

mW

[3]

-

370

mW

[1]

-

1.1

W

junction temperature

-

150

°C

operating ambient

temperature

−65

+150

°C

storage temperature

−65

+150

°C

Per device

total power dissipation

[3]

-

600

mW

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Per transistor

thermal resistance from junction

to ambient

in free air

[1]

340

K/W

[2]

110

K/W