BSC024N025SG datasheet(1/10 Pages) INFINEON

Part #	BSC024N025SG

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC024N025S G

OptiMOS®2 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC

1 for target applications

• Logic level / N-channel

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Superior thermal resistance

• Avalanche rated

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

100

A

T C=100 °C

95

T A=25 °C,

R thJA=45 K/W

2)

27

Pulsed drain current

I D,pulse

T C=25 °C

3)

200

Avalanche energy, single pulse

E AS

I D=50 A, R GS=25 Ω

800

mJ

Reverse diode dv /dt

dv /dt

I D=50 A, V DS=24 V,

di /dt =200 A/µs,

T j,max=150 °C

6

kV/µs

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

89

W

T A=25 °C,

R thJA=45 K/W

2)

2.8

Operating and storage temperature

T j, T stg

-55 ... 150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

Value

V DS

25

V

R DS(on),max

2.4

m

Ω

I D

100

A

Product Summary

Type

Package

Ordering Code

Marking

BSC024N025S G

PG-TDSON-8

24N025S

PG-TDSON-8

Rev. 0.93

page 1

2006-02-24

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