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BTS5231GS Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BTS5231GS Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 28 page Data Sheet 3 V1.0, 2005-12-19 Type Ordering Code Package BTS 5231GS SP000203741 P-DSO-14-18 Smart High-Side Power Switch PROFET BTS 5231GS Product Summary The BTS 5231GS is a dual channel high-side power switch in P-DSO-14-18 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Basic Features • Very low standby current • 3.3 V and 5 V compatible logic pins • Improved electromagnetic compatibility (EMC) • Stable behaviour at undervoltage • Logic ground independent from load ground • Secure load turn-off while logic ground disconnected • Optimized inverse current capability Operating voltage V bb(on) 4.5 … 28 V Over voltage protection V bb(AZ) 41 V On-State resistance R DS(ON) 140 m Ω Nominal load current (one channel active) I L(nom) 1.8 A Current limitation I L(LIM) 8A Current limitation repetitive I L(SCr) 3A Standby current for whole device with load I bb(OFF) 2.5 µA P-DSO-14-18 |
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