High Current PN Half Bridge

BTS 7960

Overview

Data Sheet

3

Rev. 1.1, 2004-12-07

1Overview

The BTS 7960 is part of the NovalithIC

 family containing three separate chips in one

package: One p-channel highside MOSFET and one n-channel lowside MOSFET

together with a driver IC, forming a fully integrated high current half-bridge. All three

chips are mounted on one common leadframe, using the chip on chip and chip by chip

technology. The power switches utilize vertical MOS technologies to ensure optimum on

state resistance. Due to the p-channel highside switch the need for a charge pump is

eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the

integrated driver IC which features logic level inputs, diagnosis with current sense, slew

rate adjustment, dead time generation and protection against overtemperature,

overvoltage, undervoltage, overcurrent and short circuit. The BTS 7960 can be

combined with other BTS 7960 to form H-bridge and 3-phase drive configurations.

1.1

Block Diagram

Figure 1

Block Diagram

IS

SR

Top-chip

INH

IN

GND

OUT

LS base-chip

VS

HS base-chip

Gate Driver

Dead Time Gen.

Slew Rate Adj.

UV Shut Down

OV Lock Out

OT Shut Down

Current Lim.

Diagnosis

Current Sense

BTS 7960