IDC04S60C

Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006

2

Applications:

•

SMPS, PFC, snubber

FEATURES:

•

Revolutionary semiconductor material -

Silicon Carbide

•

Switching behavior benchmark

•

No reverse recovery

•

No temperature influence on the switching

behavior

•

No forward recovery

•

High surge current capability

A

C

Chip Type

Die Size

Package

IDC04S60C

600V

4A

1.146 x 0.968 mm

2

sawn on foil

MECHANICAL PARAMETER:

Raster size

1.146x 0.968

Anode pad size

0.909 x 0.731

mm

Area total / active

1.11 / 0.74

mm

2

Thickness

355

µm

Wafer size

75

mm

Flat position

0

deg

Max. possible chips per wafer

3461 pcs

Passivation frontside

Photoimide

Anode metalization

3200 nm Al

Cathode metalization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

Electrically conductive glue or solder

Wire bond

Al,

≤ 350µm

Reject Ink Dot Size

∅ ≥ 0.3 mm

Recommended Storage Environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C