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IHW20N120R2 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IHW20N120R2
Description  Reverse Conducting IGBT with monolithic body diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IHW20N120R2 Datasheet(HTML) 6 Page - Infineon Technologies AG

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IHW20N120R2
Soft Switching Series
Power Semiconductors
6
Rev. 1.2
May 06
0A
10A
20A
30A
100ns
1000ns
t
f
t
d(off)
10Ω
20Ω
30Ω
40Ω
50Ω
60Ω
70Ω
100ns
1000ns
t
f
t
d(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
TJ=175°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
TJ=175°C, VCE=600V,
VGE=0/15V, IC=20A,
Dynamic test circuit in Figure E)
25°C
50°C
75°C
100°C
125°C
150°C
10ns
100ns
t
f
t
d(off)
-50°C
0°C
50°C
100°C
2V
3V
4V
5V
6V
max.
typ.
min.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
VCE=600V,
VGE=0/15V, IC=20A, RG=29Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(
IC = 0.5mA)


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