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IHW20N120R2 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IHW20N120R2 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 12 page IHW20N120R2 Soft Switching Series Power Semiconductors 6 Rev. 1.2 May 06 0A 10A 20A 30A 100ns 1000ns t f t d(off) 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 100ns 1000ns t f t d(off) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=15Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=20A, Dynamic test circuit in Figure E) 25°C 50°C 75°C 100°C 125°C 150°C 10ns 100ns t f t d(off) -50°C 0°C 50°C 100°C 2V 3V 4V 5V 6V max. typ. min. TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=20A, RG=29Ω, Dynamic test circuit in Figure E) Figure 12. Gate-emitter threshold voltage as a function of junction temperature ( IC = 0.5mA) |
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