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IPB10N03LB Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPB10N03LB Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPB10N03LB Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1232 1639 pF Output capacitance C oss - 440 586 Reverse transfer capacitance Crss -59 88 Turn-on delay time t d(on) -5 7 ns Rise time t r -4 6 Turn-off delay time t d(off) -18 26 Fall time t f - 3.0 4.5 Gate Charge Characteristics 6) Gate to source charge Q gs - 4.2 5.6 nC Gate charge at threshold Q g(th) - 2.0 2.6 Gate to drain charge Q gd - 2.6 4.0 Switching charge Q sw - 4.9 7 Gate charge total Q g -10 13 Gate plateau voltage V plateau - 3.4 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V - 8 11 nC Output charge Q oss V DD=15 V, V GS=0 V -10 13 Reverse Diode Diode continous forward current I S - - 50 A Diode pulse current I S,pulse - - 200 Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.99 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 6) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 Ω V DD=15 V, I D=25 A, V GS=0 to 5 V Rev. 0.92 page 3 2005-10-27 |
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