IPB10N03LB datasheet(3/9 Pages) INFINEON

Part #	IPB10N03LB

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB10N03LB

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

1232

1639

pF

Output capacitance

C oss

-

440

586

Reverse transfer capacitance

Crss

-59

88

Turn-on delay time

t d(on)

-5

7

ns

Rise time

t r

-4

6

Turn-off delay time

t d(off)

-18

26

Fall time

t f

-

3.0

4.5

Gate Charge Characteristics

6)

Gate to source charge

Q gs

-

4.2

5.6

nC

Gate charge at threshold

Q g(th)

-

2.0

2.6

Gate to drain charge

Q gd

-

2.6

4.0

Switching charge

Q sw

-

4.9

7

Gate charge total

Q g

-10

13

Gate plateau voltage

V plateau

-

3.4

-

V

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

-

8

11

nC

Output charge

Q oss

V DD=15 V, V GS=0 V

-10

13

Reverse Diode

Diode continous forward current

I S

-

50

A

Diode pulse current

I S,pulse

-

200

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

-

0.99

1.2

V

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

-

10

nC

6) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=25 A, R G=2.7 Ω

V DD=15 V, I D=25 A,

V GS=0 to 5 V

Rev. 0.92

page 3

2005-10-27

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