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IPB048N06L Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPB048N06L Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page IPP048N06L G IPB048N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 1) 100 A T C=100 °C 100 Pulsed drain current I D,pulse T C=25 °C 2) 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 810 mJ Reverse diode dv /dt dv /dt I D=100 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 2) See figure 3 1) Current is limited by bondwire; with an R thJC=0.5 the chip is able to carry 161A V DS 60 V R DS(on),max SMDversion 4.4 m Ω I D 100 A Product Summary Type IPP048N06L IPB048N06L Package P-TO220-3-1 P-TO263-3-2 Marking 048N06L 048N06L Rev. 1.11 page 1 2006-04-20 |
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