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IPB091N06NG Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPB091N06NG Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page IPB091N06N G IPP091N06N G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2100 2800 pF Output capacitance C oss - 600 800 Reverse transfer capacitance C rss - 150 225 Turn-on delay time t d(on) -14 21 ns Rise time t r -29 44 Turn-off delay time t d(off) -39 58 Fall time t f -28 42 Gate Charge Characteristics 4) Gate to source charge Q gs -12 16 nC Gate charge at threshold Q g(th) -6 8 Gate to drain charge Q gd -28 41 Switching charge Q sw -33 49 Gate charge total Q g -61 81 Gate plateau voltage V plateau - 5.6 - V Output charge Q oss V DD=30 V, V GS=10 V -39 52 Reverse Diode Diode continous forward current I S - - 80 A Diode pulse current I S,pulse - - 320 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.95 1.3 V Reverse recovery time t rr -50 63 ns Reverse recovery charge Q rr -76 95 nC 4) See figure 16 for gate charge parameter definition V R=30 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=80 A, R G=4.7 Ω V DD=30 V, I D=80 A, V GS=0 to 10 V Rev. 1.0 page 3 2006-06-20 |
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