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IPP085N06LG Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPP085N06LG Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page IPB085N06L G IPP085N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 1) 80 A T C=100 °C 76 Pulsed drain current I D,pulse T C=25 °C 2) 320 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 370 mJ Reverse diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 188 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 2) See figure 3 1) Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 97 A. V DS 60 V R DS(on),max SMD version 8.2 m Ω I D 80 A Product Summary Type Package Marking IPB085N06L G P-TO263-3-2 085N06L IPP085N06L G P-TO220-3-1 085N06L Type IPB085N06L G IPP085N06L G Package P-TO263-3-2 P-TO220-3-1 Marking 085N06L 085N06L Rev. 1.01 page 1 2006-06-13 |
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