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IPD09N03LBG Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPD09N03LBG Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page IPD09N03lB G IPS09N03LB G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC 1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 2) 50 A T C=100 °C 42 Pulsed drain current I D,pulse T C=25 °C 3) 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 57 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage 4) V GS ±20 V Power dissipation P tot T C=25 °C 58 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 30 V R DS(on),max 9.1 m Ω I D 50 A Product Summary Type IPD09N03LB G IPS09N03LB G Package PG-TO252-3-11 PG-TO251-3-11 Marking 09N03LB 09N03LB Rev. 1.5 page 1 2006-05-15 |
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