IPD230N06LG datasheet(3/9 Pages) INFINEON

Part #	IPD230N06LG

Description	OptiMOS짰 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD230N06L G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

1100

1500

pF

Output capacitance

C oss

-

250

330

Reverse transfer capacitance

C rss

-

67

101

Turn-on delay time

t d(on)

-11

17

ns

Rise time

t r

-16

24

Turn-off delay time

t d(off)

-21

32

Fall time

t f

-15

23

Gate Charge Characteristics

4)

Gate to source charge

Q gs

-4

5

nC

Gate charge at threshold

Q g(th)

-

1.7

2

Gate to drain charge

Q gd

-10

16

Switching charge

Q sw

-13

19

Gate charge total

Q g

-31

42

Gate plateau voltage

V plateau

-

3.7

-

V

Output charge

Q oss

V DD=30 V, V GS=4.5 V

-10

13

Reverse Diode

Diode continous forward current

I S

-

30

A

Diode pulse current

I S,pulse

-

120

Diode forward voltage

V SD

V GS=0 V, I F=30 A,

T j=25 °C

-

0.91

1.3

V

Reverse recovery time

t rr

-47

58

ns

Reverse recovery charge

Q rr

-45

55

nC

4) See figure 16 for gate charge parameter definition

V R=30 V, I F=I S,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=30 V,

f =1 MHz

V DD=30 V, V GS=10 V,

I D=30 A, R G=5 Ω

V DD=30 V, I D=30 A,

V GS=0 to 10 V

Rev. 1.0

page 3

2006-06-13

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