IPI05CN10NG datasheet(2/11 Pages) INFINEON

Part #	IPI05CN10NG

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB05CN10N G IPI05CN10N G

IPP05CN10N G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

0.5

K/W

Thermal resistance,

R thJA

minimal footprint

-

62

junction - ambient

6 cm

2 cooling area5)

--

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

100

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=250 µA

234

Zero gate voltage drain current

I DSS

V DS=80 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=80 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

1

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=100 A,

TO220, TO262

-

4.1

5.4

m

Ω

V GS=10 V, I D=100 A,

TO263

-

3.8

5.1

Gate resistance

R G

-

1.8

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=100 A

81

162

-

S

1)J-STD20 and JESD22

5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

4) T

jmax=150 °C and duty cycle D=0.01 for V gs<-5V

2) Current is limited by bondwire; with an R

thJC=0.5 K/W the chip is able to carry 161 A.

3) See figure 3

Rev. 1.05

page 2

2006-06-02

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