Electronic Components Datasheet Search |
|
IPP06CN10N Datasheet(PDF) 3 Page - Infineon Technologies AG |
|
IPP06CN10N Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page IPB06CN10N G IPI06CN10N G IPP06CN10N G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 6920 9200 pF Output capacitance C oss - 1050 1400 Reverse transfer capacitance C rss -58 87 Turn-on delay time t d(on) -17 26 ns Rise time t r -27 40 Turn-off delay time t d(off) -26 39 Fall time t f -7 10 Gate Charge Characteristics 6) Gate to source charge Q gs -36 49 nC Gate to drain charge Q gd -25 37 Switching charge Q sw -40 58 Gate charge total Q g - 104 139 Gate plateau voltage V plateau - 5.3 - V Output charge Q oss V DD=50 V, V GS=0 V - 111 148 nC Reverse Diode Diode continous forward current I S - - 100 A Diode pulse current I S,pulse - - 400 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 110 ns Reverse recovery charge Q rr - 295 - nC 6) See figure 16 for gate charge parameter definition V R=50 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=50 A, R G=1.6 Ω V DD=50 V, I D=100 A, V GS=0 to 10 V Rev. 1.05 page 3 2006-06-02 |
Similar Part No. - IPP06CN10N |
|
Similar Description - IPP06CN10N |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |