IPB08CN10NG datasheet(1/11 Pages) INFINEON

Part #	IPB08CN10NG

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB08CN10N G

IPI08CN10N G IPP08CN10N G

OptiMOS®2 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target application

• Ideal for high-frequency switching and synchronous rectification

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

95

A

T C=100 °C

68

Pulsed drain current

2)

I D,pulse

T C=25 °C

380

Avalanche energy, single pulse

E AS

I D=95 A, R GS=25 Ω

262

mJ

Reverse diode dv /dt

dv /dt

I D=95 A, V DS=80 V,

di /dt =100 A/µs,

T j,max=175 °C

6

kV/µs

Gate source voltage

3)

V GS

±20

V

Power dissipation

P tot

T C=25 °C

167

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

V DS

100

V

R DS(on),max (TO263)

8.2

m

Ω

I D

95

A

Product Summary

Type

IPB08CN10N G

IPI08CN10N G

IPP08CN10N G

Package

PG-TO263-3

PG-TO262-3

PG-TO220-3

Marking

08CN10N

Rev. 1.02

page 1

2006-06-02

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