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IPB08CN10NG Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPB08CN10NG Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC 1) for target application • Ideal for high-frequency switching and synchronous rectification Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 95 A T C=100 °C 68 Pulsed drain current 2) I D,pulse T C=25 °C 380 Avalanche energy, single pulse E AS I D=95 A, R GS=25 Ω 262 mJ Reverse diode dv /dt dv /dt I D=95 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage 3) V GS ±20 V Power dissipation P tot T C=25 °C 167 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 100 V R DS(on),max (TO263) 8.2 m Ω I D 95 A Product Summary Type IPB08CN10N G IPI08CN10N G IPP08CN10N G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 08CN10N 08CN10N 08CN10N Rev. 1.02 page 1 2006-06-02 |
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