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IPP16CNE8N Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPP16CNE8N Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 12 page IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2430 3230 pF Output capacitance C oss - 452 601 Reverse transfer capacitance C rss -33 50 Turn-on delay time t d(on) -15 22 ns Rise time t r -14 21 Turn-off delay time t d(off) -27 41 Fall time t f -7 11 Gate Charge Characteristics 5) Gate to source charge Q gs -14 18 nC Gate to drain charge Q gd -8 13 Switching charge Q sw -15 21 Gate charge total Q g -36 48 Gate plateau voltage V plateau - 5.6 - V Output charge Q oss V DD=40 V, V GS=0 V -34 46 nC Reverse Diode Diode continous forward current I S - - 53 A Diode pulse current I S,pulse - - 212 Diode forward voltage V SD V GS=0 V, I F=53 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 110 - ns Reverse recovery charge Q rr - 210 - nC 5) See figure 16 for gate charge parameter definition V R=40 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=26.5 A, R G=1.6 Ω V DD=40 V, I D=53 A, V GS=0 to 10 V Rev. 1.01 page 3 2006-02-16 |
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