IPP26CN10NG datasheet(3/13 Pages) INFINEON

Part #	IPP26CN10NG

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB26CN10N G IPD25CN10N G

IPI26CN10N G IPP26CN10N G IPU25CN10N G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

1560

2070

pF

Output capacitance

C oss

-

232

309

Reverse transfer capacitance

C rss

-16

24

Turn-on delay time

t d(on)

-10

15

ns

Rise time

t r

-4

6

Turn-off delay time

t d(off)

-13

19

Fall time

t f

-3

4

Gate Charge Characteristics

5)

Gate to source charge

Q gs

-

9

12

nC

Gate to drain charge

Q gd

-6

8

Switching charge

Q sw

-10

14

Gate charge total

Q g

-23

31

Gate plateau voltage

V plateau

-

5.6

-

V

Output charge

Q oss

V DD=50 V, V GS=0 V

-24

32

nC

Reverse Diode

Diode continous forward current

I S

-

35

A

Diode pulse current

I S,pulse

-

140

Diode forward voltage

V SD

V GS=0 V, I F=35 A,

T j=25 °C

-

1

1.2

V

Reverse recovery time

t rr

-85

ns

Reverse recovery charge

Q rr

-

165

-

nC

5) See figure 16 for gate charge parameter definition

V R=50 V, I F=I S,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=50 V,

f =1 MHz

V DD=50 V, V GS=10 V,

I D=35 A, R G=1.6 Ω

V DD=50 V, I D=35 A,

V GS=0 to 10 V

Rev. 1.01

page 3

2006-06-02

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