IPI80N06S3L-06 datasheet(1/8 Pages) INFINEON

Part #	IPI80N06S3L-06

Description	OptiMOS짰-T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IPB80N06S3L-06

IPI80N06S3L-06, IPP80N06S3L-06

OptiMOS®-T Power-Transistor

Features

• N-channel - Logic Level - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• Ultra low Rds(on)

• 100% Avalanche tested

• ESD Class 2 (HBM)

EIA/JESD22-A114-B

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Unit

Continuous drain current

1)

I D

T C=25 °C, V GS=10 V

80

A

T C=100 °C,

V GS=10 V

2)

80

Pulsed drain current

2)

I D,pulse

T C=25 °C

320

Avalanche energy, single pulse

3)

E AS

I D=40 A

250

mJ

Drain gate voltage

2)

V DG

55

V

Gate source voltage

4)

V GS

±16

V

Power dissipation

P tot

T C=25 °C

136

W

Operating and storage temperature

T j, T stg

-55 ... +175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

V DS

55

V

R DS(on),max (SMD version)

5.6

m

Ω

I D

80

A

Product Summary

PG-TO220-3-1

PG-TO262-3-1

PG-TO263-3-2

Type

Package

Ordering Code

Marking

IPB80N06S3L-06

PG-TO263-3-2

SP0000-88004

3N06L06

IPI80N06S3L-06

PG-TO262-3-1

SP0000-88002

3N06L06

IPP80N06S3L-06

PG-TO220-3-1

SP0000-88006

3N06L06

Rev. 1.0

page 1

2005-09-16

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IPI80N06S3L-06 Datasheet(PDF) 1 Page - Infineon Technologies AG

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