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IPB80N08S2-07 Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IPB80N08S2-07
Description  OptiMOS짰 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPB80N08S2-07 Datasheet(HTML) 6 Page - Infineon Technologies AG

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IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
9 Typ. Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 80 A; VGS = 10 V
parameter: I D
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
25 °C
175 °C
10
3
10
2
10
1
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Ciss
Coss
Crss
10
4
10
3
10
2
0
5
10
15
20
25
30
V DS [V]
250 µA
1250 µA
1
1.5
2
2.5
3
3.5
4
-60
-20
20
60
100
140
180
T j [°C]
2
4
6
8
10
12
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 6
2006-03-03


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