Preliminary

SIDC06D120H6

Edited by INFINEON Technologies AI PS DD HV3, L 4342S, Edition 1, 8.01.2002

Fast switching diode chip in EMCON-Technology

This chip is used for:

•

EUPEC power modules and

discrete devices

FEATURES:

•

1200V EMCON technology 120 µm chip

•

soft, fast switching

•

low reverse recovery charge

•

small temperature coefficient

Applications:

•

SMPS, resonant applications,

drives

A

C

Chip Type

Die Size

Package

Ordering Code

SIDC06D120H6

1200V

7.5A

2.45 x 2.45 mm

2

sawn on foil

Q67050-A4150-

A001

MECHANICAL PARAMETER:

Raster size

2.45 x 2.45

Area total / active

6 / 3.24

Anode pad size

1.73 x 1.73

mm

2

Thickness

120

µm

Wafer size

150

mm

Flat position

180

deg

Max. possible chips per wafer

2520 pcs

Passivation frontside

Photoimide

Anode metallisation

3200 nm AlSiCu

Cathode metallisation

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al,

≤500µm

Reject Ink Dot Size

∅ 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C