Q67050-A4114 datasheet(2/4 Pages) INFINEON

Part #	Q67050-A4114

Description	IGBT Chip in NPT-technology

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Manufacturer	INFINEON [Infineon Technologies AG]

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SIGC25T120CS

Edited by INFINEON Technologies AI PS DD HV3, L 7141-S, Edition 2, 03.09.2003

MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Collector-emitter voltage, Tj=25 °C

V CE

1200

V

DC collector current, limited by Tjmax

I C

1 )

A

Pulsed collector current, tp limited by Tjmax

I cpuls

45

A

Gate emitter voltage

V GE

±20

V

Operating junction and storage temperature

Tj, Tstg

-55 ... +150

°C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Collector-emitter breakdown voltage

V(BR)CES

VGE=0V , IC=1mA

1200

Collector-emitter saturation voltage

VCE(sat)

VGE=15V, IC=15A

2.5

3.0

3.6

Gate-emitter threshold voltage

VGE(th)

IC=0.6mA , VGE=VCE

3.0

4.0

5.0

V

Zero gate voltage collector current

ICES

VCE=1200V , VGE=0V

2

µA

Gate-emitter leakage current

IGES

VCE=0V , VGE=20V

480

nA

ELECTRICAL CHARACTERISTICS (tested at component):

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Input capacitance

Ciss

-

1250

Output capacitance

Coss

-

100

Reverse transfer capacitance

Crss

V CE=25V,

V GE=0V,

f =1MHz

-

65

pF

SWITCHING CHARACTERISTICS (tested at component), Inductive Load

Value

Parameter

Symbol

Conditions

1)

min.

typ.

max.

Unit

Turn-on delay time

t d(on)

-

38

Rise time

t r

-

30

Turn-off delay time

t d(off)

-

652

Fall time

t f

Tj=150 ° C

V CC =800V,

I C =15A,

V GE= - 15/15V,

RG= 33Ω

-

31

ns

1) values also influenced by parasitic L- and C- in measurement and package.

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