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Q67041-A4692-A001 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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Q67041-A4692-A001 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIGC42T60NC Edited by INFINEON Technologies AI PS DD HV3, L 7272-M, Edition 2, 28.11.2003 IGBT Chip in NPT-technology This chip is used for: • IGBT-Modules FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Applications: • drives G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC42T60NC 600V 50A 6.5 x 6.5 mm 2 sawn on foil Q67041-A4692- A001 MECHANICAL PARAMETER: Raster size 6.5 x 6.5 Area total / active 42.25 / 35.6 Emitter pad size 2x( 3.0x2.85 ) Gate pad size 0.8 x 1.5 mm 2 Thickness 100 µm Wafer size 150 mm Flat position 90 deg Max.possible chips per wafer 334 Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1% Collector metallization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, ≤500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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