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SIGC42T120CL Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIGC42T120CL Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIGC42T120CL Edited by INFINEON Technologies AI PS DD HV3, L 7151-P, Edition 2, 03.09.2003 IGBT Chip in NPT-technology This chip is used for: • power module BSM25GD120DLC E3224 FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Applications: • drives G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC42T120CL 1200V 25A 6.59 x 6.49 mm 2 sawn on foil C67078-A4675- A001 SIGC42T120CL 1200V 25A 6.59 x 6.49 mm 2 unsawn C67078-A4675- A002 MECHANICAL PARAMETER: Raster size 6.59 x 6.49 Emitter pad size 2 x ( 2.18 x 1.58 ) Gate pad size 1.06 x 0.65 Area total / active 42.8 / 33.5 mm 2 Thickness 180 µm Wafer size 150 mm Flat position 90 grd Max.possible chips per wafer 334 pcs Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1% Collector metallization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, <500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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