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SPI80N06S-08 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # SPI80N06S-08
Description  SIPMOS짰 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI80N06S-08 Datasheet(HTML) 7 Page - Infineon Technologies AG

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SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
13 Typ. Avalanche characteristics
14 Typ. Avalanche Energy
I AS=f(t AV); R GS=25 Ω
E AS=f(T j); VDD = 25 V; RGS=25 Ω
parameter: T j(start)
parameter: I D
15 Typ. gate charge
16 Drain-source breakdown voltage
V GS=f(Q gate); I D=80 A pulsed
V BR(DSS)=f(T j); I D=250 µA
parameter: V DD
25 °C
100 °C
150 °C
1
10
100
1
10
100
1000
t AV [µs]
50
52
54
56
58
60
62
64
-60
-20
20
60
100
140
180
T j [°C]
11 V
44 V
0
2
4
6
8
10
12
0
20
40
60
80
100
120
140
Q gate [nC]
80 A
0
100
200
300
400
500
600
700
800
0
50
100
150
200
T j [°C]
Rev. 1.0
page 7
2004-11-30


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