NTZD3154N datasheet(3/5 Pages) ONSEMI

Part #	NTZD3154N

Description	Small Signal MOSFET 20 V, 540 mA, Dual N?묬hannel

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NTZD3154N

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

0

0.2

0.4

0.6

0.8

1.0

1.2

0

1

234

56

78

9

10

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

1.8 V

VGS = 1.6 V

VGS = 1.4 V

VGS = 1.2 V

VGS = 1.0 V

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.5

1.0

1.5

2.0

2.5

3.0

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

VDS w 10 V

TJ = 25°C

TJ = 100°C

TJ = −55°C

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

12

34

5

6

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = 0.54 A

TJ = 25°C

5.5 V

VGS = 2.0 V to 2.2 V

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.2

0.4

0.6

0.8

1

1.2

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

TJ = 25°C

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

TJ = 25°C

0.6

0.8

1

1.2

1.4

1.6

1.8

2

−50

−25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

ID = 0.54 A

VGS = 4.5 V

10

100

1000

2

4

6

8

101214

1618

20

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

TJ = 150°C

TJ = 100°C

VGS = 0 V

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