ELECTRICAL CHARACTERISTICS: (T
C = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS: (T
C = 25°C unless otherwise noted)
STATIC P/N OMD100 (100V)
STATIC P/N OMD200 (200V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
GS = 0,
BV
DSS
Drain-Source Breakdown
200
V
V
GS = 0,
Voltage
I
D = 250 mA
Voltage
I
D = 250 mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mAVGS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mA
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = +20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = + 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS = -20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS = - 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
T
C = 125° C
T
C = 125° C
I
D(on)
On-State Drain Current1
35
A
V
DS
2 V
DS(on), VGS = 10 V
I
D(on)
On-State Drain Current1
30
A
V
DS
2 V
DS(on), VGS = 10 V
V
DS(on)
Static Drain-Source On-State
1.1
1.60
V
V
GS = 10 V, ID = 20 A
V
DS(on)
Static Drain-Source On-State
1.36
1.76
V
V
GS = 10 V, ID = 16 A
Voltage1
Voltage1
R
DS(on)
Static Drain-Source On-State
.065 .080
V
GS = 10 V, ID = 20 A
R
DS(on)
Static Drain-Source On-State
.085
.110
V
GS = 10 V, ID = 16 A
Resistance1
Resistance1
R
DS(on)
Static Drain-Source On-State
.10
.160
V
GS = 10 V, ID = 20 A,
R
DS(on)
Static Drain-Source On-State
0.14
.200
V
GS = 10 V, ID = 16 A,
Resistance1
T
C = 125 C
Resistance1
T
C = 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance1
9.0
10
S(W )
V
DS
2 V
DS(on), ID = 20 A
g
fs
Forward Transductance1
10.0 12.5
S(W )
V
DS
2 V
DS(on), ID = 16 A
C
iss
Input Capacitance
2700
pF
V
GS = 0
C
iss
Input Capacitance
2400
pF
V
GS = 0
C
oss
Output Capacitance
1300
pF
V
DS = 25 V
C
oss
Output Capacitance
600
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
470
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
250
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
28
ns
V
DD = 30 V, ID @ 20 A
t
d(on)
Turn-On Delay Time
25
ns
V
DD = 75 V, ID @ 16 A
t
r
Rise Time
45
ns
R
g = 5.0 W , VG = 10V
t
r
Rise Time
60
ns
R
g = 5.0 W ,VGS = 10V
t
d(off)
Turn-Off Delay Time
100
ns
t
d(off)
Turn-Off Delay Time
85
ns
t
f
Fall Time
50
ns
t
f
Fall Time
38
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 40
A
Modified MOSPOWER
I
S
Continuous Source Current
- 30
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
- 160
A
the integral P-N
I
SM
Source Current1
- 120
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage1
- 2.5
V
T
C = 25 C, IS = -40 A, VGS = 0
V
SD
Diode Forward Voltage1
- 2
V
T
C = 25 C, IS = -30 A, VGS = 0
t
rr
Reverse Recovery Time
400
ns
T
J = 150 C, IF = IS,
t
rr
Reverse Recovery Time
350
ns
T
J = 150 C, IF = IS,
dl
F/ds = 100 A/ms
dl
F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
(MOSFET switching times are
essentially independent of
operating temperature.)
(MOSFET switching times are
essentially independent of
operating temperature.)
G
D
S
G
D
S
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