MW6S010NR1 datasheet(5/20 Pages) FREESCALE

Part #	MW6S010NR1

Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

Download	20 Pages

Scroll/Zoom	100%

Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

Logo

5 / 20 page

MW6S010NR1 MW6S010GNR1

5

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS — 900 MHz

970

16

48

910

−26

−8

IRL

Gps

IMD

f, FREQUENCY (MHz)

VDD = 28 Vdc, Pout = 10 W (Avg.)

IDQ = 125 mA, 100 kHz Tone Spacing

44

−10

40

−12

36

−14

32

−16

28

−18

24

−20

20

−22

930

950

960

Figure 3. Two-Tone Wideband Performance

@ Pout = 10 Watts

Pout, OUTPUT POWER (WATTS) AVG.

15

20

1

IDQ = 190 mA

VDD = 28 Vdc, f = 945 MHz

Two− Tone Measurements

100 kHz Tone Spacing

19

17

16

10

100

Figure 4. Two-Tone Power Gain versus

Output Power

100

−70

−10

0.1

7th Order

VDD = 28 Vdc, IDQ = 125 mA

f = 945 MHz, Two− Tone Measurements

100 kHz Tone Spacing

5th Order

3rd Order

110

−20

−30

−40

−50

−60

Pout, OUTPUT POWER (WATTS) AVG.

Figure 5. Intermodulation Distortion Products

versus Output Power

10

−55

−15

0.1

7th Order

TWO− TONE SPACING (MHz)

VDD = 28 Vdc, Pout = 10 W (Avg.)

IDQ = 125 mA, Two−Tone Measurements

(f1+f2)/2 = Center Frequency = 945 MHz

5th Order

3rd Order

−20

−25

−30

−35

−40

1

100

Figure 6. Intermodulation Distortion Products

versus Tone Spacing

29

48

P3dB = 43.14 dBm (20.61 W)

Pin, INPUT POWER (dBm)

VDD = 28 Vdc, IDQ = 125 mA

Pulsed CW, 8

μsec(on), 1 msec(off)

f = 945 MHz

46

44

42

40

38

21

23

25

Actual

Ideal

27

19

Figure 7. Pulse CW Output Power versus

Input Power

920

940

18

90 mA

125 mA

P1dB = 42.23 dBm (16.71 W)

−50

−45

−24

0.1

ηD

Similar Part No. - MW6S010NR1

Manufacturer	Part #	Datasheet	Description
Freescale Semiconductor...	MW6S010NR1	542Kb / 16P	RF Power Field Effect Transistor
Freescale Semiconductor...	MW6S010NR1	730Kb / 20P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
NXP Semiconductors	MW6S010NR1	802Kb / 20P	RF Power Field Effect Transistors Rev. 5, 6/2009
Freescale Semiconductor...	MW6S010NR1	730Kb / 20P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

More results

Similar Description - MW6S010NR1

Manufacturer	Part #	Datasheet	Description
Freescale Semiconductor...	MRF6V2010NR1	592Kb / 15P	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6S19140HR3	404Kb / 11P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6S23140HR3	434Kb / 12P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6V2300NR1	522Kb / 14P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6V4300NBR5	822Kb / 15P	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
	MRFE6S8046NR1	445Kb / 17P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF7S15100HR3	240Kb / 13P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6S18100NR1	769Kb / 21P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
	MRF6V14300HR3	643Kb / 10P	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
	MRF1550NT1	288Kb / 13P	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

More results

MW6S010NR1 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

MW6S010NR1 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

Similar Part No. - MW6S010NR1

Similar Description - MW6S010NR1

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Datasheet Download

Link URL