IC61SF25632T/D IC61SF25636T/D

IC61SF51218T/D

2

Integrated Circuit Solution Inc.

SSR020-0A 9/03/2002

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

FEATURES

• Flowthrough Mode operation.

• User-selectable Output Drive Strength with XQ Mode.

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Pentium™ or linear burst sequence control using

MODE input

• Common data inputs and data outputs

• JEDEC 100-Pin TQFP and 119-pin PBGA package

• Single +3.3V, +10%, –5% core power supply

• Power-down snooze mode

• 2.5V or 3.3V I/O Supply

• Snooze MODE for reduced-power standby

• T version (three chip selects)

• D version (two chip selects)

256K x 32, 256K x 36, 512K x 18

8Mb SYNCBURST Flow throughSRAMs

DESCRIPTION

ICSI's 8Mb SyncBurst Flowthrough SRAMs integrate a 512k x

18, 256k x 32, or 256k x 36 SRAM core with advanced

synchronous peripheral circuitry and a 2-bit burst counter.

Applications

Applications

Applications

Applications

Applications

The ICSI SyncBurst Flowthrough SRAM family employs high-

speed ,low-power CMOS designs that are fabricated using an

advanced CMOS process to provide Level 2 Cache applica-

tions supporting Pentium and PowerPC microprocessors

originally, the device now finds application ranging from DSP

main store to networking chip set support.

Controls

All synchronous inputs pass through registers controlled by a

positive-edge-triggered single clock input.Bursts can be initiated

with either

ADSP (Address Status Processor) or ADSC (Address

Status Cache Controller) input pins. Subsequent burst ad-

dresses can be generated internally and controlled by the

ADV

(burst address advance) input pin. The mode pin is used to select

the burst sequence order, Linear burst is achieved when this pin

is tied LOW. Interleave burst is achieved when this pin is tied

HIGH or left floating.

Byte Write and Global Write

Write cycles are internally self-timed and are initiated by the rising

edge of the clock input. Write cycles can be from one to four bytes

wide as controlled by the write control inputs.Separate byte

enables allow individual bytes to be written. Byte write operation

is performed by using byte write enable (

BWE).input combined

with one or more individualbyte write signals (

BWx). In addition,

Global Write (

GW) is available for writing all bytes at one time,

regardless of the byte write controls.

IOL/IOH Drive strength Options

The XQ pin allows selection between high drive strength (XQ

low) for multi-drop bus applications and normal drive strength

(XQ floating or high) point-to-point applications. See the Output

Driver Characteristics chart for details.

Snooze Mode

Low power (Snooze mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK). Memory

data is retained during Snooze mode.

FAST ACCESS TIME

Symbol -6.5

-7.5

-8.5

-9.5

Units

Flow

6.5

7.5

8.5

9.5

ns

Through

7.5

8.5

10

11

ns

2-1-1-1

270

260

240

230

mA