IS61S6432

Integrated Circuit Solution Inc.

5

SSE003-0B

INTERLEAVED BURST ADDRESS TABLE

External Address

1st Burst Address

2nd Burst Address

3rd Burst Address

A1 A0

A1 A0

A1 A0

A1 A0

00

01

10

11

01

00

11

10

10

11

00

01

11

10

01

00

Symbol

Parameter

Value

Unit

Temperature Under Bias

–10 to +85

°C

Storage Temperature

–55 to +150

°C

Power Dissipation

1.8

W

Output Current (per I/O)

100

mA

Voltage Relative to GND for I/O Pins

V

Voltage Relative to GND for for Address and Control Inputs

–0.5 to 5.5

V

Notes:

1.

Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,

precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.

3. This device contains circuitry that will ensure the output devices are in High-Z at power up.

LINEAR BURST ADDRESS TABLE

0,0

1,0

0,1

A1’, A0’ = 1,1

OPERATING RANGE

Range

Ambient Temperature

Commercial

0°C to +70°C

3.3V +10%, –5%

Industrial

–40°C to +85°C

3.3V +10%, –5%