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IC62VV5128L-100TI Datasheet(PDF) 4 Page - Integrated Circuit Solution Inc |
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IC62VV5128L-100TI Datasheet(HTML) 4 Page - Integrated Circuit Solution Inc |
4 / 11 page 4 Integrated Circuit Solution Inc. LPSR020-0A 11/26/2001 IC62VV5128L IC62VV5128LL ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameter Value Unit VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.4 V VCC Vcc related to GND –0.3 to +4.0 V TBIAS Temperature Under Bias –40 to +85 °C TSTG Storage Temperature –65 to +150 °C PT Power Dissipation 1 W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1)(2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF COUT Output Capacitance VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25oC, f = 1 MHz, VCC = 1.8 V DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage VCC = Min., IOH = -0.1 mA 1.4 — V VOL Output LOW Voltage VCC = Min., IOL = 0.1 mA — 0.2 V VIH Input HIGH Voltage(1) 1.4 VCC + 0.3 V VIL Input LOW Voltage(2) –0.2 0.4 V ILI Input Leakage GND ≤ VIN ≤ VCC –1 1 µA ILO Output Leakage GND ≤ VOUT ≤ VCC –1 1 µA Notes: 1. VIH (max) =VCC +2.0V for pulse width less than 10ns. 2. VIL (min) = –2.0V for pulse width less than 10 ns. |
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