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IS62LV2568LL-70T Datasheet(PDF) 7 Page - Integrated Circuit Solution Inc

Part # IS62LV2568LL-70T
Description  256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IS62LV2568LL-70T Datasheet(HTML) 7 Page - Integrated Circuit Solution Inc

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Integrated Circuit Solution Inc.
7
SR025_0C
IS62LV2568L
IS62LV2568LL
-55
-70
-100
Symbol Parameter
Min.
Max.
Min.
Max.
Min.
Max
Unit
tWC
Write Cycle Time
55
—
70
—
100
—
ns
tSCE1
CE1 to Write End
45
—
65
—
80
—
ns
tSCE2
CE2 to Write End
45
—
65
—
80
—
ns
tAW
Address Setup Time to Write End
45
—
65
—
80
—
ns
tHA
Address Hold from Write End
0
—
0
—
0
—
ns
tSA
Address Setup Time
0
—
0
—
0
—
ns
tPWE(4) WE Pulse Width
50
—
55
—
70
—
ns
tSD
Data Setup to Write End
25
—
30
—
40
—
ns
tHD
Data Hold from Write End
0
—
0
—
0
—
ns
tHZWE(3) WE LOW to High-Z Output
—
25
—
25
—
30
ns
tLZWE(3) WE HIGH to Low-Z Output
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to
2.2V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the Write.
4. Tested with OE HIGH.
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range, Standard and Low Power)
DATA-IN VALID
DATA UNDEFINED
tWC
tSCE1
tSCE2
tAW
tHA
tPWE(4)
tHZWE
HIGH-Z
tLZWE
tSA
tSD
tHD
ADDRESS
CE1
CE2
WE
DOUT
DIN
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE Controlled)(1,2)


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