Integrated Circuit Solution Inc.

1

SR025_0C

IS62LV2568L

IS62LV2568LL

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

DESCRIPTION

The

They are fabricated using

technology. This highly reliable process coupled with innova-

tive circuit design techniques, yields higher performance and

low power consumption devices.

When CE1 is HIGH or CE2 is LOW (deselected), the device

assumes a standby mode at which the power dissipation can

be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enable

inputs, CE1 and CE2. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

The IS62LV2568L and IS62LV2568LL are available in 32-pin

8*20mm TSOP-1, 8*13.4mm TSOP-1 and 48-pin 6*8mm TF-

BGA.

FUNCTIONAL BLOCK DIAGRAM

A0-A17

CE2

OE

WE

2048 x 128 x 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

CE1

IS62LV2568L

IS62LV2568LL

CMOS STATIC RAM

FEATURES

• Access times of 55, 70, 100 ns

• Low active power: 126 mW (max, L, LL)

• Low standby power: 36 µW (max, L) and 7.2

µW (max, LL) CMOS standby

• Low data retention voltage: 1.5V (min.)

• Available in Low Power (-L) and Ultra-Low

Power (-LL)

• Output Enable (OE) and two Chip Enable

• TTL compatible inputs and outputs

• Single 2.7V-3.6V power supply

• Available in the 32-pin 8x20mm TSOP-1, 32-pin

8x13.4mm TSOP-1 and 48-pin 6*8mm TF-BGA