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IS41LV16105B-50KLI Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc |
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IS41LV16105B-50KLI Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc |
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4 / 20 page  4 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 04/18/05 IS41LV16105B ISSI® Functional Description The IS41LV16105B is a CMOS DRAM optimized for high- speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 16 address bits. These are entered ten bits (A0-A9) at a time. The row address is latched by the Row Address Strobe ( RAS). The column address is latched by the Column Address Strobe ( CAS). RAS is used to latch the first nine bits and CAS is used the latter nine bits. The IS41LV16105B has two CAS controls, LCAS and UCAS. The LCAS and UCAS inputs internally generates a CAS signal functioning in an identical manner to the single CAS input on the other 1M x 16 DRAMs. The key difference is that each CAS controls its corresponding I/O tristate logic (in conjunction with OE and WE and RAS). LCAS controls I/O0 through I/O7 and UCAS controls I/O8 through I/O15. The IS41LV16105B CAS function is determined by the first CAS (LCAS or UCAS) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IS41LV16105B both BYTE READ and BYTE WRITE cycle capabilities. Memory Cycle A memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time speci- fied by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOEA are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters. Write Cycle A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs last. Refresh Cycle To retain data, 1,024 refresh cycles are required in each 16 ms period. There are two ways to refresh the memory. 1. By clocking each of the 1,024 row addresses (A0 through A9) with RAS at least once every 16 ms. Any read, write, read-modify-write or RAS-only cycle re- freshes the addressed row. 2. Using a CAS-before-RAS refresh cycle. CAS-before- RAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 9-bit counter provides the row ad- dresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle. Power-On After application of the VDD supply, an initial pause of 200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles contain- ing a RAS signal). During power-on, it is recommended that RAS track with VDD or be held at a valid VIH to avoid current surges. |
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