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IRGPC20KD2 Datasheet(PDF) 2 Page - International Rectifier |
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IRGPC20KD2 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRGPC20KD2 Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Notes: Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage---- 0.37 ---- V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 2.4 3.5 IC = 6.0A VGE = 15V ---- 3.6 ---- V IC = 10A See Fig. 2, 5 ---- 2.9 ---- IC = 6.0A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA ∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 1.9 3.3 ---- S VCE = 100V, IC = 6.0A ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 1700 VGE = 0V, VCE = 600V, TJ = 150°C V FM Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A See Fig. 13 ---- 1.3 1.6 IC = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 17 26 IC = 6.0A Qge Gate - Emitter Charge (turn-on) ---- 4.3 6.8 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) ---- 6.4 11 See Fig. 8 td(on) Turn-On Delay Time ---- 59 ---- TJ = 25°C tr Rise Time ---- 38 ---- ns IC = 6.0A, VCC = 480V td(off) Turn-Off Delay Time ---- 110 210 VGE = 15V, RG = 50Ω t f Fall Time ---- 80 120 Energy losses include "tail" and Eon Turn-On Switching Loss ---- 0.28 ---- diode reverse recovery. Eoff Turn-Off Switching Loss ---- 0.15 ---- mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss ---- 0.43 0.90 tsc Short Circuit Withstand Time 10 ---- ---- µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 50 Ω, VCPK < 500V td(on) Turn-On Delay Time ---- 52 ---- TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time ---- 35 ---- ns IC = 6.0A, VCC = 480V td(off) Turn-Off Delay Time ---- 170 ---- VGE = 15V, RG = 50Ω t f Fall Time ---- 170 ---- Energy losses include "tail" and Ets Total Switching Loss ---- 0.65 ---- mJ diode reverse recovery. LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Cies Input Capacitance ---- 350 ---- VGE = 0V Coes Output Capacitance ---- 45 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 4.7 ---- ƒ = 1.0MHz trr Diode Reverse Recovery Time ---- 37 55 ns TJ = 25°C See Fig. ---- 55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C See Fig. ---- 4.5 8.0 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C See Fig. ---- 124 360 TJ = 125°C 16 di/dt = 200A/ µs di(rec)M/dtDiode Peak Rate of Fall of Recovery ---- 240 ---- A/µs TJ = 25°C See Fig. During tb ---- 210 ---- TJ = 125°C 17 Pulse width ≤ 80µs; duty factor ≤ 0.1%. VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω, ( See fig. 19 ) Pulse width 5.0µs, single shot. |
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