IS61WV12816BLL-12BLI datasheet(5/5 Pages) ISSI

Part #	IS61WV12816BLL-12BLI

Description	128K x 16 HIGH-SPEED CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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5 / 5 page

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

5

Rev. C

02/03/06

ISSI®

IS61WV12816BLL

IS64WV12816BLL

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-12ns

-15 ns

Symbol

Parameter

Test Conditions

Min.

Max.

Min.

Max.

Unit

ICC

VDD Operating

VDD = Max.,

CE = VIL

Com.

—

35

—

30

mA

Supply Current

IOUT = 0 mA, f = Max.

Ind.

—

40

—

35

Auto

—

40

typ.(2)

—25

—

20

ISB1

TTL Standby

VDD = Max.,

Com.

—

20

—

20

mA

Current

VIN = VIH or VIL

Ind.

—

20

—

20

(TTL Inputs)

CE

≥ VIH, f = max

Auto

—

30

ISB2

CMOS Standby

VDD = Max.,

Com.

—

750

—

750

μA

Current

CE

≥ VDD – 0.2V,

Ind.

—

900

—

900

μA

(CMOS Inputs)

VIN

≥ VDD – 0.2V, or

Auto

—

6

mA

VIN

≤ 0.2V, f = 0

typ.(2)

—

400

—

400

μA

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD=3.3V, TA=250C. Not 100% tested.

CAPACITANCE(1)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Input/Output Capacitance

VOUT = 0V

8

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

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