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IS62VV25616LL-70T Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc |
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IS62VV25616LL-70T Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc |
7 / 10 page Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 7 Rev. B 08/07/02 IS62VV25616LL ISSI® WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) -70 -85 Symbol Parameter Min. Max. Min. Max. Unit tWC Write Cycle Time 70 — 85 — 1ns tSCE CE to Write End 65 — 70 — ns tAW Address Setup Time to Write End 65 — 70 — ns tHA Address Hold from Write End 0 — 0 — ns tSA Address Setup Time 0 — 0 — ns tPWB LB, UB Valid to End of Write 60 — 70 — ns tPWE WE Pulse Width 55 — 60 — ns tSD Data Setup to Write End 30 — 35 — ns tHD Data Hold from Write End 0 — 0 — ns tHZWE(3) WE LOW to High-Z Output — 30 — 30 ns tLZWE(3) WE HIGH to Low-Z Output 5 — 5 — ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4V to 1.4V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = ( CE) [ (LB) = (UB) ] (WE). AC WAVEFORMS WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW) DATA UNDEFINED t WC VALID ADDRESS t SCS t PWE1 t PWE2 t AW t HA HIGH-Z t PBW t HD t SA t HZWE ADDRESS CE UB, LB WE DOUT DIN DATAIN VALID t LZWE t SD UB_CSWR1.eps |
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