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IS62VV25616LL-70TI Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc |
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IS62VV25616LL-70TI Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc |
5 / 10 page Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5 Rev. B 08/07/02 IS62VV25616LL ISSI® READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) -70 -85 Symbol Parameter Min. Max. Min. Max. Unit tRC Read Cycle Time 70 — 85 — ns tAA Address Access Time — 70 — 85 ns tOHA Output Hold Time 10 — 10 — ns tACE CE Access Time — 70 — 85 ns tDOE OE Access Time — 35 — 40 ns tHZOE(2) OE to High-Z Output — 25 — 25 ns tLZOE(2) OE to Low-Z Output 5 — 5 — ns tHZCE(2) CE to High-Z Output 0 25 0 25 ns tLZCE(2) CE to Low-Z Output 10 — 10 — ns tBA LB, UB Access Time — 70 — 85 ns tHZB LB, UB to High-Z Output 0 25 0 25 ns tLZB LB, UB to Low-Z Output 0 — 0 — ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -70 -85 Symbol Parameter Test Conditions Min. Max. Min. Max. Unit ICC Vdd Dynamic Operating VDD = Max., Com. — 30 — 30 mA Supply Current IOUT = 0 mA, f = fMAX Ind. — 35 — 35 ICC1 Operating Supply VDD = Max., Com. — 3 — 3 mA Current IOUT = 0 mA, f = 1 MHZ Ind. — 3 — 3 ISB1 TTL Standby Current VDD = Max., Com. — 0.3 — 0.3 mA (TTL Inputs) VIN = VIH or VIL Ind. — 0.3 — 0.3 CE ≥ VIH , f = 0 OR ULB Control Vdd = Max., VIN = VIH or VIL CE = VIL, f = 0, UB = VIH, LB = VIH ISB2 CMOS Standby VDD = 1.95V., Com. — 10 — 10 µA Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. — 10 — 10 VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 OR ULB Control VDD = 1.95V., CE = VIL VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. |
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