IS62WV6416ALL datasheet(7/17 Pages) ISSI

Part #	IS62WV6416ALL

Description	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

7

Rev. B

06/03/05

IS62WV6416ALL, IS62WV6416BLL

ISSI®

IS62WV6416BLL, POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol

Parameter

TestConditions

Max.

Unit

45

55

ICC

VDDDynamicOperating

VDD=Max.,

Com.

17

15

mA

SupplyCurrent

IOUT = 0 mA, f = fMAX

Ind.

17

15

typ.(2)

12

10

ICC1

OperatingSupply

VDD=Max.,

Com.

5

mA

Current

IOUT = 0 mA, f = 0

Ind.

5

ISB1

TTLStandbyCurrent

VDD=Max.,

Com.

1.2

mA

(TTLInputs)

VIN =VIH orVIL

Ind.

1.2

CS1=VIH,CS2=VIL,

f = 1 MHZ

OR

ULB Control

VDD= Max., VIN = VIH orVIL

CS1=VIL,f=0,UB =VIH,LB=VIH

ISB2

CMOSStandby

VDD=Max.,

Com.

15

µA

Current(CMOSInputs)

CS1

≥VDD–0.2V,

Ind.

15

CS2

≤ 0.2V,

typ.(2)

55

VIN

≥VDD–0.2V,or

VIN

≤0.2V, f=0

OR

ULB Control

VDD = Max.,

CS1 = VIL, CS2=VIH

VIN

≤0.2V,f=0;UB/LB=VDD–0.2V

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD=3.0V, TA=25oC. Not 100% tested.

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IS62WV6416ALL Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc

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