IS64LV6416L datasheet(4/14 Pages) ISSI

Part #	IS64LV6416L

Description	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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IS64LV6416L

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

05/02/03

ISSI®

CAPACITANCE(1)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Input/Output Capacitance

VOUT = 0V

8

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-10 ns

-12 ns

Symbol Parameter

Test Conditions

Min.

Max.

Min.

Max.

Unit

ICC

VDD Dynamic Operating

VDD = Max.,

A1

—

95

—

mA

Supply Current

IOUT = 0 mA, f = fMAX

A2

—

105

A3

—

115

ISB1

TTL Standby Current

VDD = Max.,

A1

—

15

—

mA

(TTL Inputs)

VIN = VIH or VIL

A2

—

18

CE

≥ VIH , f = 0

A3

—

20

ISB2

CMOS Standby

VDD = Max.,

A1

—

2

—

mA

Current (CMOS Inputs)

CE

≥ VDD – 0.2V,

A2

—

3

VIN

≥ VDD – 0.2V, or

A3

—

5

VIN

≤ 0.2V, f = 0

typ(2)

—

0.5

—

0.5

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 3.3V, TA = 25oC and not 100% tested.

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