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IS62WV51216BLL-45B Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc

Part # IS62WV51216BLL-45B
Description  512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS62WV51216BLL-45B Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
02/24/05
IS62WV51216ALL, IS62WV51216BLL
ISSI®
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CS1 , CS2 and WE inputs and at
least one of the
LB and UB inputs being in the LOW state.
2. WRITE = (
CS1) [ (LB) = (UB) ] (WE).
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CS1 Controlled, OE = HIGH or LOW)
DATA-IN VALID
DATA UNDEFINED
tWC
tSCS1
tSCS2
tAW
tHA
tPWE
tHZWE
HIGH-Z
tLZWE
tSA
tSD
tHD
ADDRESS
CS1
CS2
WE
DOUT
DIN
LB, UB
tPWB
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
45ns
55 ns
70 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
45
55
70
ns
tSCS1/tSCS2 CS1/CS2 to Write End
35
45
60
ns
tAW
Address Setup Time to Write End
35
45
60
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Setup Time
0
0
0
ns
tPWB
LB, UB Valid to End of Write
35
45
60
ns
tPWE(4)
WE Pulse Width
35
40
50
ns
tSD
Data Setup to Write End
20
25
30
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE(3)
WE LOW to High-Z Output
20
20
30
ns
tLZWE(3)
WE HIGH to Low-Z Output
5
5
5
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to
VDD-0.2V/0.4V to VDD-0.3V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
4. tPWE > tHZWE + tSD when
OE is LOW.


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