IS64LV6416L-12TA3 datasheet(3/14 Pages) ISSI

Part #	IS64LV6416L-12TA3

Description	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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3 / 14 page

IS64LV6416L

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. C

05/02/03

1

2

3

4

5

6

7

8

9

10

11

12

ISSI®

OPERATING RANGE

Options

Ambient Temperature

VDD

A1

–40°C to +85°C

3.3V ± 10%

A2

–40°C to +105°C

3.3V ± 10%

A3

–40°C to +125°C

3.3V ± 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol

Parameter

Test Conditions

Options

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –4.0 mA

2.4

—

V

VOL

Output LOW Voltage

VDD = Min., IOL = 8.0 mA

A1, A2

—

0.4

V

A3

—

0.5

V

VIH

Input HIGH Voltage

2

VDD + 0.3

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

–2

2

µA

ILO

Output Leakage

GND

≤ VOUT ≤ VDD, Outputs Disabled

–2

2

µA

Notes:

1. VIL (min.) = –2.0V for pulse width less than 10 ns.

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.5 to VDD+0.5

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.5

W

IOUT

DC Output Current (LOW)

20

mA

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

TRUTH TABLE

I/O PIN

Mode

WE

CE

OE

LB

UB

I/O0-I/O7

I/O8-I/O15

VDD Current

Not Selected

X

H

X

High-Z

ISB1, ISB2

Output Disabled

H

L

H

X

High-Z

ICC

X

L

X

H

High-Z

Read

H

L

H

DOUT

High-Z

ICC

H

L

H

L

High-Z

DOUT

H

LLLL

DOUT

Write

L

X

L

H

DIN

High-Z

ICC

L

X

H

L

High-Z

DIN

LL

X

L

DIN

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