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IS65WV25616BLL-70TA2 Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS65WV25616BLL-70TA2
Description  256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS65WV25616BLL-70TA2 Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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IS65WV25616ALL
IS65WV25616BLL
ISSI®
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. 00B
06/20/06
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice.
ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
256K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC SRAM
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation
36 mW (typical) operating
9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
1.65V--2.2V VDD (65WV25616ALL)
2.5V--3.6V VDD (65WV25616BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• TEMPERATURE OFFERINGS:
Option A1: -40°C to +85°C
Option A2: -40°C to +105°C
Option A3: -40°C to +125°C
• Lead-free available
DESCRIPTION
The
ISSI IS65WV25616ALL/IS65WV25616BLL are high-
speed, low power, 4M bit SRAMs organized as 256K words
by 16 bits. It is fabricated using
ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1 is HIGH (deselected) or when CS1 is LOW, and
both
LB and UB are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB) and Lower Byte (LB)
access.
The IS65WV25616BALL/65WV25616BLL are packaged in
the JEDEC standard 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
PRELIMINARY INFORMATION
JUNE 2006
A0-A17
CS1
OE
WE
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
25616LL_BLK.eps


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