Absolute Maximum Ratings

Operating Conditions

Handling Procedures

Stresses above these listed maximum ratings may cause

permanent damage to the device. Exposure beyond specified

operating conditions may affect device reliability or cause

malfunction.

This device has built-in protection against high static voltages

2

Table 1

Parameter

Maximum voltage at V

Max. voltage at remaining pins

Min. voltage on all pins

DD

Maximum storage temperature

Minimum storage temperature

Maximum electrostatic discharge

to MIL-STD-883C method 3015

Maximum soldering conditions

V

DDmax

V

max

V

min

T

STOmin

T

STOmax

V

Smax

T

Smax

V

+ 7.0V

SS

V

+ 0.3V

DD

V

- 0.3V

SS

-55 C

O

+125 C

O

1000V

250 C x 10s

O

Symbol Conditions

or electric fields; however, it is advised that normal precautions

must be taken as for any other CMOS component. Unless

otherwise specified, proper operation can only occur when all

terminal voltages are kept within the supply voltage range.

Unused inputs must always be tied to a defined logic voltage

level.

T

A

-40

2.0

5.0

+85

V

V/ s

m

nF

kHz

pF

k

W

5.5

6

12.5

50

100

32.768

8.2

35

7

V

DD

C

L

R

S

f

dv/dt

Table 2

Parameter

Symbol Min. Typ. Max. Units

Operating temperature

Logic supply voltage

Supply voltage dv/dt

(power-up & down)

Decoupling capacitor

Crystal Characteristics

Frequency

Load Capacitance

Series resistance

Electrical Characteristics

V

= 5.0V ± 10%, V

= 0 V, T = -40 to +85 C, unless otherwise specified

DD

S

A

O

S

1)

2)

3)

4)

With

= 0 (V ) all I/O pads can be tri-state, tested.

With

= 1 (V

),

= 1 (V

) and all other I/O pads fixed to V

or to V : same standby current, not tested.

All other inputs to V

and all outputs open.

At a given temperature.

See Fig. 4

PFO

PFO

CS

SS

DD

DD

DD

SS

DD

Table 3

Standby current

1)

Dynamic current

2)

IRQ (open drain)

Inputs and Outputs

Output low voltage

Input logic low

Output low voltage

Input logic high

Output logic low

Output logic high

PF activation voltage

PF hysteresis

Pullup on SYNC

Input leakage

Output tri-state leakage

Oscillator Characteristics

Starting voltage

Frequency tolerance

Frequency stability

Temperature stability

Start-up time

Frequency Characteristics

I

DD

I

DD

V

OL

V

OL

V

IL

V

IH

V

OL

V

OH

V

H

V

PFL

I

IN

I

LS

I

TS

V

STA

V

STA

T

STA

Df/f

f

sta

t

sta

ppm/V

ppm

T

+25 C

O

T = +25 C addr. 10 hex = 00 hex

A

O

210

4)

251

ppm

2.0

V

5.5 V

££

DD

3)

1

5

addr. 10 hex = 00 hex

see Fig. 5

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Units

T = +25 C

A

0

V

= 0.8 V

ILS

V<V <V

SS

IN

DD

CS=1

T = +25 C

A

0

T = +25 C

A

0

I= 6 mA

OL

I= 6 mA

OH

0.2

V

×

DD

V

V

V

V

V

0.8

V

×

DD

0.4

2.4

0.5

V

×

DD

100

mV

mA

nA

nA

20

10

1000

10

1000

2

V

V

s

2.5

1

I

=8mA

OL

I

=1mA, V

=2V

OH

DD

0.4

0.4

V

V

V

=3V,

= 0

DD

PF

V

=5V,

= 0

DD

PF

1.2

2

10

15

1.5

mA

mA

mA

CS

RD

= 4 MHz,

= V ,

SS

WR = V

DD

A3024

R