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THN6301U Datasheet(PDF) 1 Page - Tachyonics CO,. LTD |
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THN6301U Datasheet(HTML) 1 Page - Tachyonics CO,. LTD |
1 / 11 page THN6301 Series □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure Pin Configuration NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA Pin No o High Power Gain 1 MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA 2 o High Transition Frequency 3 fT = 10 GHz Typ. @ VCE = 8 V, IC = 15 mA □ Available Package Product □ h FE Classification THN6301S THN6301U THN6301Z THN6301E □ Absolute Maximum Ratings THN6301KF Caution : ESD sensitive device Unit : mm SOT523 1.6ⅹ0.8, 0.8t Dimension SOT23 SOT323 Package 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t E Emitter C Collector Symbol Description B Base 150 mW ℃ ℃ 2.5 65 150 -65 ~ 150 VCBO VCEO VEBO Ic PT TSTG TJ Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Symbol Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage V V 25 12 Marking AA1 AA2 hFE 125 to 300 80 to 160 2.0ⅹ1.25, 1.0t Unit SOT343 SOT623F 1.4ⅹ0.8, 0.6t Ratings V mA NPN SiGe RF TRANSISTOR SOT 523 Unit in mm www.tachyonics.co.kr - 1/11 - Aug.-2005 Rev 2.0 |
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