EDI2AG272128V-D1

White Electronic Designs

1

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

July 1999

ADVANCED*

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

2 Megabyte Sync/Sync Burst, Small Outline DIMM

FEATURES

The EDI2AG272128VxxD1 is a Synchronous/Synchronous

Burst SRAM, 72 position DIMM (144 contacts) Module,

organized as 2x128Kx72. The Module contains four

(4) Synchronous Burst Ram Devices, packaged in the

industry standard JEDEC 14mmx20mm TQFP placed on

a Multilayer FR4 Substrate. The module architecture is

defined as a Sync/Sync Burst, Flow-Through, with support

for linear burst. This module provides High Performance,

2-1-1-1 accesses when used in Burst Mode, and used as

a Synchronous Only Mode, provides a high performance

cost advantage over BiCMOS aysnchronous device

architectures.

Synchronous Only operations are performed via strapping

ADSC# Low, and ADSP#/ADV# High, which provides for

Ultra Fast Accesses in Read Mode while providing for

internally self-timed Early Writes.

Synchronous/Synchronous Burst operations are in relation

to an externally supplied clock, Registered Address,

Registered Global Write, Registered Enables as well as

an Asynchronous Output enable. This Module has been

defined with full flexibility, which allows individual control

of each of the eight bytes, as well as Quad Words in both

Read and Write Operations.

*This product is under development, is not qualified or characterized and is subject to

change or cancellation without notice.

2x128Kx72 Synchronous, Synchronous Burst

Flow-Through Architecture

Linear Burst Mode

Clock Controlled Registered Bank Enables (E1#, E2#)

Clock Controlled Byte Write Mode Enable (BWE#)

Clock Controlled Byte Write Enables

(BW1# - BW8#)

Clock Controlled Registered Address

Clock Controlled Registered Global Write (GW#)

Aysnchronous Output Enable (G#)

Internally self-timed Write

Gold Lead Finish

3.3V ± 10% Operation

Access Speed(s): TKHQV=8.5, 9, 10, 12ns

Common Data I/O

High Capacitance (30pf) drive, at rated Access Speed

Single total array Clock

Multiple Vcc and Gnd