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SSP5N60A Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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SSP5N60A Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page SSP5N60A 10 -1 10 0 10 1 10 -1 10 0 10 1 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom : 4.5V V DS , Drain-Source Voltage [V] 10 0 10 1 0 300 600 900 C iss= Cgs+ Cgd ( Cds= shorted ) C oss = C ds + C gd C rss = C gd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS , Drain-Source Voltage [V] 0 5 10 15 20 25 30 35 0 5 10 V DS = 480 V V DS = 300 V V DS = 120 V @ Notes : I D = 4.5 A Q G , Total Gate Charge [nC] 0 2468 10 12 0 1 2 3 4 5 @ Note : T J = 25 oC V GS = 20 V V GS = 10 V I D , Drain Current [A] 2 468 10 10 -1 10 0 10 1 25 oC 150 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = 50 V 3. 250 µs Pulse Test V GS , Gate-Source Voltage [V] 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 10 1 150 oC 25 oC @ Notes : 1. V GS = 0 V 2. 250 µs Pulse Test V SD , Source-Drain Voltage [V] N-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current |
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