March 2006

©2006 Fairchild Semiconductor Corporation

FDD8782/FDU8782 Rev. A

www.fairchildsemi.com

1

FDD8782/FDU8782

25V, 35A, 11m

Ω

General Description

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

Application

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

Features

Low gate resistance

Avalanche rated and 100% tested

RoHS Compliant

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

25

V

Gate to Source Voltage

±20

V

Drain Current -Continuous (Package Limited)

35

A

-Continuous (Die Limited)

54

-Pulsed

(Note 1)

321

Single Pulse Avalanche Energy

(Note 2)

70

mJ

Power Dissipation

50

W

Operating and Storage Temperature

-55 to 175

°C

Thermal Resistance, Junction to Case TO-252,TO-251

3.0

°C/W

Thermal Resistance, Junction to Ambient TO-252,TO-251

100

°C/W

52

°C/W

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD8782

FDD8782

TO-252AA

13’’

12mm

2500 units

FDU8782

FDU8782

TO-251AA

N/A(Tube)

N/A

75 units

FDU8782

FDU8782_F071

TO-251AA

N/A(Tube)

N/A

75 units

A D

F R E E I

D

G

S

Short Lead I-PAK

I-PAK

(TO-251AA)

G DS

G

D

S