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W3EG2128M72AFSR-AD3 Datasheet(PDF) 8 Page - White Electronic Designs Corporation |
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W3EG2128M72AFSR-AD3 Datasheet(HTML) 8 Page - White Electronic Designs Corporation |
8 / 13 page W3EG2128M72AFSR-D3 -AD3 8 White Electronic Designs January 2006 Rev. 3 FINAL White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (continued) DDR400: VCC = VCCQ = +2.6V ± 0.1V; DDR333, 266: VCC = VCCQ = +2.5V ± 0.2V AC Characteristics 403 335 262 265 Parameter Symbol Min Max Min Max Min Max Min Max Units Notes ACTIVE to ACTIVE/AUTO REFRESH command period tRC 55 60 60 60 ns AUTO REFRESH command period tRFC 70 72 75 75 ns 21 ACTIVE to READ or WRITE delay tRCD 15 15 15 15 ns PRECHARGE command period tRP 15 15 15 15 ns DQS read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK DQS read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK ACTIVE bank a to ACTIVE bank b command tRRD 10 12 15 15 ns DQS write preamble tWPRE 0.25 0.25 0.25 0.25 tCK DQS write preamble setup time tWPRES 0000 ns 10,11 DQS write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK 9 Write recovery time tWR 15 15 15 15 ns Internal WRITE to READ command delay tWTR 2111 tCK Data valid output window NA tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ ns 13 REFRESH to REFRESH command interval tREFC 70.3 70.3 70.3 70.3 μs 12 Average periodic refresh interval tREFI 7.8 7.8 7.8 7.8 μs 12 Terminating voltage delay to VCC tVTD 0000 ns Exit SELF REFRESH to non-READ command tXSNR 70 75 75 75 ns Exit SELF REFRESH to READ command tXSRD 200 200 200 200 tCK Note: • These parameters serve to support both SAMSUNG and MICRON components based modules. |
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