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W3EG7263S263AJD3 Datasheet(PDF) 5 Page - White Electronic Designs Corporation

Part # W3EG7263S263AJD3
Description  512MB- 64Mx72 DDR SDRAM REGISTERED w/PLL
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

W3EG7263S263AJD3 Datasheet(HTML) 5 Page - White Electronic Designs Corporation

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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3EG7263S-D3
-JD3
-AJD3
April 2004
Rev. # 2
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
Recommended operating conditions, 0°C £ TA £ +70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V.
Includes DDR SDRAM components and PLL and Register
Parameter
Symbol
Rank 1
Conditions
DDR333@CL=2.5
Max
DDR266:@CL=2, 2.5
Max
DDR200@CL=2 S
Max
Units
Rank 2
Standby
State
Operating Current
IDD0
One device bank; Active - Precharge;
tRC = tRC (MIN); tCK = tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control inputs
changing once every two cycles.
TBD
1715
1715
mA
IDD3N
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC = tRC (MIN);
tCK = tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
TBD
2255
2255
mA
IDD3N
Precharge Power-
Down Standby Current
IDD2P
All device banks idle; Power-down
mode; tCK = tCK (MIN); CKE = (low)
TBD
54
54
rnA
IDD2P
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK = tCK (MIN); CKE = High; Address
and other control inputs changing once
per clock cycle. VIN = VREF for DQ, DQS
and DM.
TBD
671
671
mA
IDD2F
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-Down
mode; tCK (MIN); CKE = (low)
TBD
540
540
mA
IDD3P
Active Standby Current
IDD3N
CS# = High; CKE = High; One device
bank; Active-Precharge;tRC = tRAS
(MAX); tCK = tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control inputs
changing once per clock cycle.
TBD
1121
1121
mA
IDD3N
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address and
control inputs changing once per clock
cycle; tCK = tCK (MIN); lOUT = 0mA.
TBD
2795
2795
mA
IDD3N
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address and
control inputs changing once per clock
cycle; tCK = tCK (MIN); DQ,DM and DQS
inputs changing once per clock cycle.
TBD
2795
2795
rnA
IDD3N
Auto Refresh Current
IDD5
tRC = tRC (MIN)
TBD
3281
3281
mA
IDD3N
Self Refresh Current
IDD6
CKE £ 0.2V
TBD
365
365
mA
IDD6
Operating Current
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC (MIN);
tCK=tCK(MIN); Address and control
inputs change only during Active Read
or Write commands.
TBD
5315
5315
mA
IDD3N


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