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W332M64V-125SBI Datasheet(PDF) 11 Page - White Electronic Designs Corporation

Part # W332M64V-125SBI
Description  32Mx64 Synchronous DRAM
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

W332M64V-125SBI Datasheet(HTML) 11 Page - White Electronic Designs Corporation

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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W332M64V-XSBX
September 2005
Rev. 3
Parameter
Symbol
-100
-125
-133
Unit
Min
Max
Min
Max
Min
Max
Access time from CLK (pos. edge)
CL = 3
tAC
7
6
5.5
ns
CL = 2
tAC
766
ns
Address hold time
tAH
1
1
0.8
ns
Address setup time
tAS
22
1.5
ns
CLK high-level width
tCH
33
2.5
ns
CLK low-level width
tCL
33
2.5
ns
Clock cycle time (22)
CL = 3
tCK
10
8
7.5
ns
CL = 2
tCK
13
10
10
ns
CKE hold time
tCKH
1
1
0.8
ns
CKE setup time
tCKS
22
1.5
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
1
1
0.8
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
2
2
1.5
ns
Data-in hold time
tDH
1
1
0.8
ns
Data-in setup time
tDS
22
1.5
ns
Data-out high-impedance time
CL = 3
(10)
tHZ
76
5.5
ns
CL = 2
(10)
tHZ
766
ns
Data-out low-impedance time
tLZ
1
1
1
ns
Data-out hold time (load)
tOH
3
3
3
ns
Data-out hold time (no load) (26)
tOHN
1.8
1.8
1.8
ns
ACTIVE to PRECHARGE command
tRAS
50
120,000
50
120,000
50
120,00
ns
ACTIVE to ACTIVE command period
tRC
70
68
68
ns
ACTIVE to READ or WRITE delay
tRCD
20
20
20
ns
Refresh period (8,192 rows) – Commercial, Industrial
tREF
64
64
64
ms
Refresh period (8,192 rows) – Military
tREF
16
16
16
ms
AUTO REFRESH period
tRFC
70
70
70
ns
PRECHARGE command period
tRP
20
20
20
ns
ACTIVE bank A to ACTIVE bank B command
tRRD
20
20
20
ns
Transition time (7)
tT
0.3
1.2
0.3
1.2
0.3
1.2
ns
WRITE recovery time
(23)
tWR
1 CLK + 7ns
1 CLK + 7ns
1 CLK +
7.5ns
(24)
15
15
15
ns
Exit SELF REFRESH to ACTIVE command
tXSR
80
80
75
ns
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 5, 6, 8, 9, 11)


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